? 2013 ixys corporation, all rights reserved xpt tm 600v igbt genx3 tm w/ diode IXXH50N60B3D1 v ces = 600v i c110 = 50a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 1.80v t fi(typ) = 135ns ds100302b(8/13) g = gate c = collector e = emitter tab = collector to-247 g c e tab extreme light punch through igbt for 5-30khz switching features ? optimized for 5-30khz switching ? square rbsoa ? anti-parallel ultra fast diode ? avalanche capability ? short circuit capability ? international standard package advantages ? high power density ? 175c rated ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 600 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 150 ? c 3 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 36a, v ge = 15v, note 1 1.55 1.80 v t j = 150 ? c 1.80 v symbol test conditions maximum ratings v ces t j = 25c to 175c 600 v v cgr t j = 25c to 175c, r ge = 1m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c( chip capability) 120 a i c110 t c = 110c 50 a i f110 t c = 110c 30 a i cm t c = 25c, 1ms 200 a i a t c = 25c 25 a e as t c = 25c 200 mj ssoa v ge = 15v, t vj = 150c, r g = 5 ? i cm = 100 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 22 ? , non repetitive p c t c = 25c 600 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g
ixys reserves the right to change limits, test conditions, and dimensions. IXXH50N60B3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.7 v t j = 150c 1.6 v i rm t j = 100c 4 a t rr t j = 100c 100 ns 25 ns r thjc 0.9 c/w i f = 30a, v ge = 0v, -di f /dt = 100a/ s, v r = 100v i f = 1a, v ge = 0v, -di f /dt = 100a/ s, v r = 30v symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 36a, v ce = 10v, note 1 12 19 s c ie s 2230 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 195 pf c res 44 pf q g(on) 70 nc q ge i c = 36a, v ge = 15v, v ce = 0.5 ? v ces 16 nc q gc 29 nc t d(on) 27 ns t ri 40 ns e on 0.67 mj t d(off) 100 150 ns t fi 135 ns e of f 0.74 1.20 mj t d(on) 30 ns t ri 45 ns e on 1.40 mj t d(off) 130 ns t fi 190 ns e off 1.20 mj r thjc 0.25 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 36a, v ge = 15v v ce = 360v, r g = 5 ? note 2 inductive load, t j = 150c i c = 36a, v ge = 15v v ce = 360v, r g = 5 ? note 2 1 - gate 2,4 - collector 3 - emitter to-247 (ixxh) outline
? 2013 ixys corporation, all rights reserved IXXH50N60B3D1 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 0 0.5 1 1.5 2 2.5 3 v ce - volts i c - amperes v ge = 15v 14v 13v 10v 8v 7v 12v 9v 11v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 7v 9v 11v 13v 12v 14v 10v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 70 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v ge = 15v 14v 13v 10v 12v 9v 7v 6v 11v 8v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 36a i c = 18a i c = 72a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 72 a t j = 25oc 36 a 18 a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 45678910111213 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXXH50N60B3D1 fig. 11. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 12. maximum transient thermal impedance a a sss 0.4 fig. 7. transconductance 0 4 8 12 16 20 24 28 32 0 102030405060708090 i c - amperes g f s - siemens t j = - 40oc, 25oc, 150oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 110 100 200 300 400 500 600 v ce - volts i c - amperes t j = 150oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 10203040506070 q g - nanocoulombs v ge - volts v ce = 300v i c = 36a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 11. forward-bias safe operating area 0 1 10 100 1,000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 10ms v ce(sat) limit dc 100s
? 2013 ixys corporation, all rights reserved IXXH50N60B3D1 fig. 13. inductive switching energy loss vs. gate resistance 0.5 1.0 1.5 2.0 2.5 3.0 5 101520253035404550 r g - ohms e off - millijoules 1 2 3 4 5 6 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 360v i c = 36a i c = 72a fig. 16. inductive turn-off switching times vs. gate resistance 100 120 140 160 180 200 220 240 5 101520253035404550 r g - ohms t f i - nanoseconds 0 50 100 150 200 250 300 350 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 360v i c = 36a i c = 72a fig. 14. inductive switching energy loss vs. collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 15 20 25 30 35 40 45 50 55 60 65 70 75 i c - amperes e off - millijoules 0 1 2 3 4 5 e on - millijoules e off e on - - - - r g = 5 ? ????? v ge = 15v v ce = 360v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 e on - millijoules e off e on - - - - r g = 5 ? ???? v ge = 15v v ce = 360v i c = 36a i c = 72a fig. 17. inductive turn-off switching times vs. collector current 30 60 90 120 150 180 210 240 270 300 15 20 25 30 35 40 45 50 55 60 65 70 75 i c - amperes t f i - nanoseconds 40 60 80 100 120 140 160 180 200 220 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 5 ? ? , v ge = 15v v ce = 360v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 60 80 100 120 140 160 180 200 220 240 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 60 70 80 90 100 110 120 130 140 150 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 5 ? ? , v ge = 15v v ce = 360v i c = 72a i c = 36a
ixys reserves the right to change limits, test conditions, and dimensions. IXXH50N60B3D1 ixys ref: ixx_50n60b3d1(5d) 8-13-13-a fig. 20. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 160 15 20 25 30 35 40 45 50 55 60 65 70 75 i c - amperes t r i - nanoseconds 20 23 26 29 32 35 38 41 44 t d(on) - nanoseconds t r i t d(on) - - - - r g = 5 ? ? , v ge = 15v v ce = 360v t j = 150oc t j = 25oc fig. 21. inductive turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 20 23 26 29 32 35 38 41 44 t d(on) - nanoseconds t r i t d(on) - - - - r g = 5 ? ? , v ge = 15v v ce = 360v i c = 72a i c = 36a fig. 19. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 5 101520253035404550 r g - ohms t r i - nanoseconds 0 20 40 60 80 100 120 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 360v i c = 72a i c = 36a
? 2013 ixys corporation, all rights reserved IXXH50N60B3D1 200 600 1000 0 400 800 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 04080120160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 1000 0123 0 10 20 30 40 50 60 i rm q r i f a v f -di f /dt -di f /dt a/ ? s a v nc a/ ? s a/ ? s t rr ns t fr z thjc a/ ? s ? s dsep 29-06 t vj = 100c v r = 300v t vj = 100c i f = 30a q r i rm fig. 26. recovery time t rr versus -di f /dt fig. 27. peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 28. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 fig. 25. dynamic parameters q r , i rm versus t vj i f = 60a i f = 30a i f = 15a fig. 24. peak reverse current i rm versus -di f /dt fig. 23. reverse recovery charge q r versus -di f /dt fig. 22. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a t vj = 25c t vj =100c t vj =150c
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